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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDP2570 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1911 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 93 W |
| Rds On (Max) @ Id, Vgs | 80 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FDP2532 Series
N-Channel PowerTrench®MOSFET 150 V, 79 A, 16 mΩ
Documents
Technical documentation and resources