Discrete Semiconductor Products

SI8481DB-T1-E1

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MOSFET P-CH 20V 9.7A 4MICRO FOOT

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Discrete Semiconductor Products

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MOSFET P-CH 20V 9.7A 4MICRO FOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8481DB-T1-E1

Current - Continuous Drain (Id) @ 25°C	9.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	47 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-UFBGA
Power Dissipation (Max) [Max]	2.8 W
Rds On (Max) @ Id, Vgs [Max]	21 mOhm
Supplier Device Package	4-MICRO FOOT® (1.6x1.6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI8481DB-T1-E1	21 mOhm	8 V	900 mV	1.8 V 4.5 V	2.8 W	Surface Mount	9.7 A	-55 °C	150 °C	P-Channel	20 V	2500 pF	MOSFET (Metal Oxide)	47 nC	4-UFBGA	4-MICRO FOOT® (1.6x1.6)

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General part information

P-Channel 20 V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)

Technical documentation and resources