SI8481 Series

Catalog

MOSFET P-CH 20V 9.7A 4MICRO FOOT

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI8481DB-T1-E1	21 mOhm	8 V	900 mV	1.8 V 4.5 V	2.8 W	Surface Mount	9.7 A	-55 °C	150 °C	P-Channel	20 V	2500 pF	MOSFET (Metal Oxide)	47 nC	4-UFBGA	4-MICRO FOOT® (1.6x1.6)