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TO-247-3 HiP
Discrete Semiconductor Products

STGWA25M120DF3

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STMicroelectronics

TRANS IGBT CHIP N-CH 1200V 50A 3-PIN TO-247 TUBE

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TO-247-3 HiP
Discrete Semiconductor Products

STGWA25M120DF3

Active
STMicroelectronics

TRANS IGBT CHIP N-CH 1200V 50A 3-PIN TO-247 TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA25M120DF3
Current - Collector (Ic) (Max) [Max]50 A
Current - Collector Pulsed (Icm)100 A
Gate Charge85 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]375 W
Reverse Recovery Time (trr)265 ns
Supplier Device PackageTO-247 Long Leads
Switching Energy850 µJ, 1.3 mJ
Td (on/off) @ 25°C28 ns, 150 ns
Test Condition15 Ohm, 25 A, 600 V, 15 V
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 655$ 5.24
Tube 1$ 6.43
30$ 3.67
120$ 3.06
510$ 2.61
1020$ 2.54

Description

General part information

STGWA25 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources