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TO-247-3 HiP
Discrete Semiconductor Products

STGW19NC60H

Obsolete
STMicroelectronics

IGBT 600V 42A TO-247-3

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TO-247-3 HiP
Discrete Semiconductor Products

STGW19NC60H

Obsolete
STMicroelectronics

IGBT 600V 42A TO-247-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW19NC60H
Current - Collector (Ic) (Max)42 A
Current - Collector Pulsed (Icm)60 A
Gate Charge53 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]140 W
Supplier Device PackageTO-247-3
Switching Energy189 µJ, 85 µJ
Td (on/off) @ 25°C [Max]97 ns
Td (on/off) @ 25°C [Min]25 ns
Test Condition390 V, 15 V, 10 Ohm, 12 A
Vce(on) (Max) @ Vge, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V
PartSwitching EnergyMounting TypeGate ChargeTest ConditionVoltage - Collector Emitter Breakdown (Max) [Max]Vce(on) (Max) @ Vge, IcReverse Recovery Time (trr)Current - Collector (Ic) (Max)Package / CaseOperating Temperature [Max]Operating Temperature [Min]Td (on/off) @ 25°C [custom]Td (on/off) @ 25°C [custom]Supplier Device PackageCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°C [Max]Td (on/off) @ 25°C [Min]Power - Max [Max]
TO-247-3 HiP
STMicroelectronics
81 µJ
125 µJ
Through Hole
53 nC
10 Ohm
12 A
15 V
390 V
600 V
2.5 V
31 ns
42 A
TO-247-3
150 °C
-55 °C
25 ns
90 ns
TO-247-3
TO-247-3 HiP
STMicroelectronics
85 µJ
189 µJ
Through Hole
53 nC
10 Ohm
12 A
15 V
390 V
600 V
2.5 V
42 A
TO-247-3
150 °C
-55 °C
TO-247-3
60 A
97 ns
25 ns
140 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.03

Description

General part information

STGW19 Series

IGBT 600 V 42 A 140 W Through Hole TO-247-3

Documents

Technical documentation and resources

No documents available