Discrete Semiconductor Products

SI8851EDB-T2-E1

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MOSFET P-CH 20V PWR MICRO FOOT

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Discrete Semiconductor Products

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MOSFET P-CH 20V PWR MICRO FOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8851EDB-T2-E1

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	30-XFBGA
Power Dissipation (Max)	660 mW
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	Power Micro Foot® (2.4x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI8851EDB-T2-E1	1.8 V 4.5 V	MOSFET (Metal Oxide)	1 V	8 V	Power Micro Foot® (2.4x2)	7.7 A	6900 pF	Surface Mount	180 nC	P-Channel	-55 °C	150 °C	8 mOhm	660 mW	30-XFBGA	20 V

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General part information

P-Channel 20 V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2)

Technical documentation and resources