SI8851 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V PWR MICRO FOOT
| Part | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Package / Case | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.8 V 4.5 V | MOSFET (Metal Oxide) | 1 V | 8 V | Power Micro Foot® (2.4x2) | 7.7 A | 6900 pF | Surface Mount | 180 nC | P-Channel | -55 °C | 150 °C | 8 mOhm | 660 mW | 30-XFBGA | 20 V |