Discrete Semiconductor Products

FDS6680AS

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® SYNCFET™, 30V, 11.5A, 10.0MΩ

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-751EB-SOIC8

Discrete Semiconductor Products

FDS6680AS

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® SYNCFET™, 30V, 11.5A, 10.0MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6680AS

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1240 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDS6680AS Series

N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ

Part	Vgs (Max)	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDS6680AS	20 V	2.5 W	MOSFET (Metal Oxide)	10 mOhm	11.5 A	30 V	3 V	30 nC	8-SOIC	Surface Mount	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	4.5 V 10 V	N-Channel	1240 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS6680AS Series

The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6680AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.