2N1613
ActiveTRANS GP BJT NPN 30V 0.5A 800MW 3-PIN TO-39 BAG
Deep-Dive with AI
Search across all available documentation for this part.
2N1613
ActiveTRANS GP BJT NPN 30V 0.5A 800MW 3-PIN TO-39 BAG
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N1613 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 0.01 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 800 mW |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 18.32 | |
| Microchip Direct | N/A | 1 | $ 19.73 | |
| Newark | Each | 100 | $ 18.32 | |
| 500 | $ 17.61 | |||
Description
General part information
2N1613-Transistor Series
This specification covers the performance requirements for NPN silicon, low-power, 2N718A, 2N1613 and 2N1613L transistors. Three levels of product assurance are provided (JAN, JANTX and JANTXV) for each device type as specified in MIL-PRF-19500/181. The device packages for the encapsulated device types are as follows: 2N718A TO-18 , 2N1613 and 2N1613L similar to TO-39 and TO-5.
Documents
Technical documentation and resources