FDN340P
ActivePOWER MOSFET, P CHANNEL, 20 V, 2 A, 70 MILLIOHMS, SOT-23 (TO-236), 3 PINS, SURFACE MOUNT
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FDN340P
ActivePOWER MOSFET, P CHANNEL, 20 V, 2 A, 70 MILLIOHMS, SOT-23 (TO-236), 3 PINS, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDN340P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 779 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.29 | |
| 1 | $ 0.46 | |||
| 10 | $ 0.35 | |||
| 10 | $ 0.24 | |||
| 25 | $ 0.21 | |||
| 50 | $ 0.20 | |||
| 100 | $ 0.17 | |||
| 100 | $ 0.21 | |||
| 500 | $ 0.20 | |||
| 500 | $ 0.14 | |||
| 1000 | $ 0.12 | |||
| 1000 | $ 0.13 | |||
| Digi-Reel® | 1 | $ 0.46 | ||
| 1 | $ 0.29 | |||
| 10 | $ 0.24 | |||
| 10 | $ 0.35 | |||
| 25 | $ 0.21 | |||
| 50 | $ 0.20 | |||
| 100 | $ 0.21 | |||
| 100 | $ 0.17 | |||
| 500 | $ 0.14 | |||
| 500 | $ 0.20 | |||
| 1000 | $ 0.13 | |||
| 1000 | $ 0.12 | |||
| Tape & Reel (TR) | 3000 | $ 0.12 | ||
| 3000 | $ 0.11 | |||
| 6000 | $ 0.12 | |||
| 6000 | $ 0.10 | |||
| 9000 | $ 0.10 | |||
| 9000 | $ 0.11 | |||
| 15000 | $ 0.09 | |||
| 30000 | $ 0.09 | |||
| 30000 | $ 0.10 | |||
| 75000 | $ 0.10 | |||
| ON Semiconductor | N/A | 1 | $ 0.10 | |
Description
General part information
FDN340P Series
This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Documents
Technical documentation and resources