Discrete Semiconductor Products

SCT070W120G3-4AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 63 MOHM TYP., 30 A IN AN HIP247-4 PACKAGE

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Documents AN4671 +24

Discrete Semiconductor Products

SCT070W120G3-4AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 63 MOHM TYP., 30 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

Documents AN4671 +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT070W120G3-4AG

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-4
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	87 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT070W120G3-4AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Part	Vgs (Max) [Max]	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Grade
STMicroelectronics SCT070W120G3-4AG	-5 V 18 V	TO-247-4	4.2 V	900 pF	87 mOhm	Through Hole	N-Channel	200 °C	-55 ░C	1.2 kV	AEC-Q101	41 nC	30 A	TO-247-4	15 V 18 V	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	22	$ 14.16
Newark	Each	1	$ 17.82
		10	$ 16.24
		25	$ 15.71
		60	$ 15.17
		120	$ 14.64
		270	$ 14.33

Description

General part information

SCT070W120G3-4AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.