Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | NGB8206ANSL3G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 20 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Input Type | Logic |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 150 W |
| Supplier Device Package | D2PAK |
| Td (on/off) @ 25°C [Max] | 5 µs |
| Td (on/off) @ 25°C [Min] | - |
| Test Condition | 9 A, 1 kOhm, 5 V, 300 V |
| Vce(on) (Max) @ Vge, Ic | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 390 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.98 | 1m+ |
| 2800 | $ 1.06 | |||
Description
General part information
NGB8206 Series
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive
Documents
Technical documentation and resources