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D2PAK
Discrete Semiconductor Products

NGB8206NT4G

Obsolete

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D2PAK
Discrete Semiconductor Products

NGB8206NT4G

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNGB8206NT4G
Current - Collector (Ic) (Max)20 A
Input TypeLogic
Mounting TypeSurface Mount
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]150 W
Supplier Device PackageD2PAK
Vce(on) (Max) @ Vge, Ic1.9 V
Voltage - Collector Emitter Breakdown (Max)390 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NGB8206ANSL3G Series

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive

Documents

Technical documentation and resources