Discrete Semiconductor Products

STD1NK80Z-1

Obsolete

MOSFET N-CH 800V 1A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 1A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD1NK80Z-1

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.7 nC
Input Capacitance (Ciss) (Max) @ Vds	160 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	45 W
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Supplier Device Package	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STD1NK80Z-1	800 V	MOSFET (Metal Oxide)	45 W	IPAK	TO-251	IPAK TO-251-3 Short Leads TO-251AA	10 V	Through Hole	30 V	160 pF	150 °C	-55 °C	N-Channel	4.5 V	7.7 nC	1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.46

General part information

N-Channel 800 V 1A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources