Discrete Semiconductor Products

TSM2309CX RFG

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MOSFET P-CHANNEL 60V 3.1A SOT23

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Discrete Semiconductor Products

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MOSFET P-CHANNEL 60V 3.1A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2309CX RFG

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Input Capacitance (Ciss) (Max) @ Vds	425 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1.56 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type
Taiwan Semiconductor Corporation TSM2309CX	4.5 V 10 V	60 V	3.1 A	150 °C	MOSFET (Metal Oxide)	Surface Mount	8.2 nC	190 mOhm	2.5 V	SC-59 SOT-23-3 TO-236-3	1.56 W	SOT-23	425 pF	20 V	P-Channel
Taiwan Semiconductor Corporation TSM2309CX RFG	4.5 V 10 V	60 V	3.1 A	150 °C	MOSFET (Metal Oxide)	Surface Mount	8.2 nC	190 mOhm	2.5 V	SC-59 SOT-23-3 TO-236-3	1.56 W	SOT-23	425 pF	20 V	P-Channel

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General part information

P-Channel 60 V 3.1A (Tc) 1.56W (Tc) Surface Mount SOT-23

Technical documentation and resources