TSM2309 Series

Catalog

-60V, -3.1A, SINGLE P-CHANNEL MOSFETS

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type
Taiwan Semiconductor Corporation TSM2309CX	4.5 V 10 V	60 V	3.1 A	150 °C	MOSFET (Metal Oxide)	Surface Mount	8.2 nC	190 mOhm	2.5 V	SC-59 SOT-23-3 TO-236-3	1.56 W	SOT-23	425 pF	20 V	P-Channel
Taiwan Semiconductor Corporation TSM2309CX RFG	4.5 V 10 V	60 V	3.1 A	150 °C	MOSFET (Metal Oxide)	Surface Mount	8.2 nC	190 mOhm	2.5 V	SC-59 SOT-23-3 TO-236-3	1.56 W	SOT-23	425 pF	20 V	P-Channel