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TO-263AB
Discrete Semiconductor Products

IXTA6N50D2-TRL

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TO-263AB
Discrete Semiconductor Products

IXTA6N50D2-TRL

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA6N50D2-TRL
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)0 V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs96 nC
Input Capacitance (Ciss) (Max) @ Vds2800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs500 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 9.36
10$ 8.03
100$ 6.69
Digi-Reel® 1$ 9.36
10$ 8.03
100$ 6.69
Tape & Reel (TR) 800$ 5.90
1600$ 5.31
NewarkEach (Supplied on Full Reel) 800$ 5.30
1600$ 4.99
2400$ 4.76

Description

General part information

IXTA6N100D2 Series

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).

Documents

Technical documentation and resources