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LITTELFUSE IXTA62N15P
Discrete Semiconductor Products

IXTA6N100D2

Active
Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 1 KV, 6 A, 2.2 OHM, TO-263AA, SURFACE MOUNT

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LITTELFUSE IXTA62N15P
Discrete Semiconductor Products

IXTA6N100D2

Active
Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 1 KV, 6 A, 2.2 OHM, TO-263AA, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA6N100D2
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)1000 V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC
Input Capacitance (Ciss) (Max) @ Vds2650 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs2.2 Ohm
Supplier Device PackageTO-263AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 9.36
50$ 7.47
100$ 6.69
500$ 5.90
1000$ 5.31
2000$ 4.98
NewarkEach 1$ 10.23
25$ 7.75
100$ 5.27
250$ 5.03
500$ 4.79

Description

General part information

IXTA6N100D2 Series

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).

Documents

Technical documentation and resources