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Technical Specifications
Parameters and characteristics for this part
| Specification | JANS1N6662US |
|---|---|
| Current - Average Rectified (Io) | 500 mA |
| Current - Reverse Leakage @ Vr | 50 nA |
| Grade | Military |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Qualification | MIL-PRF-19500/587 |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | D-5A |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
JANTX1N6662-Rectifier Series
This "standard recovery" rectifier diode is military qualified to MIL-PRF-19500/587 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 500 mA rated rectifiers for working peak reverse voltages from 225 to 600 volts are hermetically sealed with void-less-glass construction using an internal "Category I" metallurgical bond. The surface mount MELF package configurations are also available by adding a "US" suffix (see separate data sheet for 1N6661US thru 1N6663US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.
Documents
Technical documentation and resources