Discrete Semiconductor Products

GD2X30MPS12D

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GeneSiC Semiconductor

DIODE ARR SIC 1200V 55A TO247-3

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Discrete Semiconductor Products

GD2X30MPS12D

Active

GeneSiC Semiconductor

DIODE ARR SIC 1200V 55A TO247-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GD2X30MPS12D

Current - Average Rectified (Io) (per Diode)	55 A
Current - Reverse Leakage @ Vr	20 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Speed	500 ns, 200 mA
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

GD2X Series

Part	Mounting Type	Technology	Operating Temperature - Junction	Package / Case	Speed	Reverse Recovery Time (trr)	Supplier Device Package	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor GD2X30MPS06D	Through Hole	SiC (Silicon Carbide) Schottky	175 °C	TO-247-3	500 mA	0 ns	TO-247-3	1 Pair Common Cathode	30 A	600 V
GeneSiC Semiconductor GD2X30MPS06N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA		SOT-227	2 Independent	42 A	650 V	175 ░C	-55 °C
GeneSiC Semiconductor GD2X20MPS12D	Through Hole	SiC (Silicon Carbide) Schottky		TO-247-3	500 mA	0 ns	TO-247-3	1 Pair Common Cathode	39 A	1.2 kV	175 ░C	-55 °C	1.8 V	10 µA
GeneSiC Semiconductor GD2X100MPS06N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA	0 ns	SOT-227	2 Independent	108 A	650 V	175 ░C	-55 °C	1.8 V	5 µA
GeneSiC Semiconductor GD2X60MPS06N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA	0 ns	SOT-227	2 Independent	70 A	650 V	175 ░C	-55 °C		10 µA	1.8 V
GeneSiC Semiconductor GD2X30MPS12D	Through Hole	SiC (Silicon Carbide) Schottky		TO-247-3	200 mA 500 ns		TO-247-3	1 Pair Common Cathode	55 A	1.2 kV	175 ░C	-55 °C		20 µA	1.8 V
GeneSiC Semiconductor GD2X10MPS12D	Through Hole	SiC (Silicon Carbide) Schottky		TO-247-3	500 mA	0 ns	TO-247-3	1 Pair Common Cathode	25 A	1.2 kV	175 ░C	-55 °C	1.8 V	5 µA
GeneSiC Semiconductor GD2X30MPS12N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA		SOT-227	2 Independent	52 A	1.2 kV	175 ░C	-55 °C
GeneSiC Semiconductor GD2X25MPS17N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA	0 ns	SOT-227	2 Independent	50 A (DC)	1700 V	175 ░C	-55 °C	1.8 V	20 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	530	$ 17.30
	Tube	1	$ 17.30
		10	$ 15.79
		25	$ 15.23
		100	$ 14.41
		250	$ 13.90
		500	$ 13.52

Description

General part information

GD2X Series

Diode Array 1 Pair Common Cathode 1200 V 55A (DC) Through Hole TO-247-3

Documents

Technical documentation and resources