GD2X Series

Catalog

DIODE ARRAY SIC 600V 30A TO247-3

Part	Mounting Type	Technology	Operating Temperature - Junction	Package / Case	Speed	Reverse Recovery Time (trr)	Supplier Device Package	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor GD2X30MPS06D	Through Hole	SiC (Silicon Carbide) Schottky	175 °C	TO-247-3	500 mA	0 ns	TO-247-3	1 Pair Common Cathode	30 A	600 V
GeneSiC Semiconductor GD2X30MPS06N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA		SOT-227	2 Independent	42 A	650 V	175 ░C	-55 °C
GeneSiC Semiconductor GD2X20MPS12D	Through Hole	SiC (Silicon Carbide) Schottky		TO-247-3	500 mA	0 ns	TO-247-3	1 Pair Common Cathode	39 A	1.2 kV	175 ░C	-55 °C	1.8 V	10 µA
GeneSiC Semiconductor GD2X100MPS06N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA	0 ns	SOT-227	2 Independent	108 A	650 V	175 ░C	-55 °C	1.8 V	5 µA
GeneSiC Semiconductor GD2X60MPS06N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA	0 ns	SOT-227	2 Independent	70 A	650 V	175 ░C	-55 °C		10 µA	1.8 V
GeneSiC Semiconductor GD2X30MPS12D	Through Hole	SiC (Silicon Carbide) Schottky		TO-247-3	200 mA 500 ns		TO-247-3	1 Pair Common Cathode	55 A	1.2 kV	175 ░C	-55 °C		20 µA	1.8 V
GeneSiC Semiconductor GD2X10MPS12D	Through Hole	SiC (Silicon Carbide) Schottky		TO-247-3	500 mA	0 ns	TO-247-3	1 Pair Common Cathode	25 A	1.2 kV	175 ░C	-55 °C	1.8 V	5 µA
GeneSiC Semiconductor GD2X30MPS12N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA		SOT-227	2 Independent	52 A	1.2 kV	175 ░C	-55 °C
GeneSiC Semiconductor GD2X25MPS17N	Chassis Mount	SiC (Silicon Carbide) Schottky		SOT-227-4 miniBLOC	500 mA	0 ns	SOT-227	2 Independent	50 A (DC)	1700 V	175 ░C	-55 °C	1.8 V	20 µA