Discrete Semiconductor Products
GNP1150TCA-ZE2
ActiveRohm Semiconductor
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 11 A, 0.15 OHM, 2.7 NC, DFN8080AK, SURFACE MOUNT
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Discrete Semiconductor Products
GNP1150TCA-ZE2
ActiveRohm Semiconductor
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 11 A, 0.15 OHM, 2.7 NC, DFN8080AK, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | GNP1150TCA-ZE2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 112 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerDFN |
| Power Dissipation (Max) [Max] | 62.5 W |
| Rds On (Max) @ Id, Vgs | 195 mOhm |
| Supplier Device Package | DFN8080AK |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 6 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
GNP1150TCA-Z Series
EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
Documents
Technical documentation and resources