EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
| Part | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Vgs (Max) [Min] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | GaNFET (Gallium Nitride) | 195 mOhm | DFN8080AK | 150 °C | 11 A | 112 pF | Surface Mount | 650 V | 8-PowerDFN | N-Channel | 5.5 V | 5 V | 2.4 V | 6 V | -10 V | 62.5 W | 2.7 nC |