GNP1150TCA-Z Series
EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
Manufacturer: Rohm Semiconductor
Catalog
EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
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EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 11A DFN8080AK, E-mode Gallium-Nitride(GaN) FET
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Vgs(th) (Max) @ Id | Operating Temperature | Technology | Supplier Device Package | Vgs (Max) [Min] | Vgs (Max) [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 11 A | 5.5 V | 5 V | 112 pF | N-Channel | 2.4 V | 150 °C | GaNFET (Gallium Nitride) | DFN8080AK | -10 V | 6 V | 8-PowerDFN | 195 mOhm | Surface Mount | 62.5 W | 650 V | 2.7 nC |