Discrete Semiconductor Products

PMV15UNEAR

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TRANSISTOR MOSFET N-CH 20V 7A 3-PIN TO-236AB T/R

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Documentsplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Reflow soldering profile +6

Discrete Semiconductor Products

PMV15UNEAR

Active

Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 20V 7A 3-PIN TO-236AB T/R

Deep-Dive with AI

Documentsplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Reflow soldering profile +6

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMV15UNEAR

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	8.3 W
Power Dissipation (Max)	610 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	900 mV

PMV15 Series

30 V, N-channel Trench MOSFET

Part	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Grade	Package / Case	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Nexperia USA Inc. PMV15ENEAR	N-Channel	20 V	20 mOhm	TO-236AB	2.5 V	175 °C	-55 °C	Surface Mount	14 nC	8.3 W 700 mW	MOSFET (Metal Oxide)	30 V	Automotive	SC-59 SOT-23-3 TO-236-3	AEC-Q101	4.5 V 10 V	440 pF	6.2 A
Nexperia USA Inc. PMV15UNEAR	N-Channel		19 mOhm	TO-236AB	900 mV	175 °C	-55 °C	Surface Mount			MOSFET (Metal Oxide)	20 V	Automotive	SC-59 SOT-23-3 TO-236-3	AEC-Q101			7 A	8 V	8.3 W	610 mW	17 nC	1.8 V	4.5 V	1220 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.42
		10	$ 0.32
		100	$ 0.19
		500	$ 0.18
		1000	$ 0.12
	Digi-Reel®	1	$ 0.42
		10	$ 0.32
		100	$ 0.19
		500	$ 0.18
		1000	$ 0.12
	N/A	3774	$ 0.70
	Tape & Reel (TR)	3000	$ 0.11
		6000	$ 0.11
		9000	$ 0.10
		30000	$ 0.10
		75000	$ 0.09

Description

General part information

PMV15 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.