Catalog
30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Grade | Package / Case | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | N-Channel | 20 V | 20 mOhm | TO-236AB | 2.5 V | 175 °C | -55 °C | Surface Mount | 14 nC | 8.3 W 700 mW | MOSFET (Metal Oxide) | 30 V | Automotive | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | 4.5 V 10 V | 440 pF | 6.2 A | |||||||
Nexperia USA Inc. | N-Channel | 19 mOhm | TO-236AB | 900 mV | 175 °C | -55 °C | Surface Mount | MOSFET (Metal Oxide) | 20 V | Automotive | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | 7 A | 8 V | 8.3 W | 610 mW | 17 nC | 1.8 V | 4.5 V | 1220 pF |