Littelfuse Power Semi TO-247 3 H 2Sq 1W2N 3L image

Discrete Semiconductor Products

IXFH16N60P3

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 600V 16A 3-PIN(3+TAB) TO-247

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Discrete Semiconductor Products

IXFH16N60P3

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 600V 16A 3-PIN(3+TAB) TO-247

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH16N60P3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1830 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	347 W
Rds On (Max) @ Id, Vgs	470 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IXFH16N120P Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Littelfuse/Commercial Vehicle Products IXFH16N50P	16 A	43 nC	30 V	400 mOhm	2250 pF	5.5 V	500 V	N-Channel	Through Hole	10 V	MOSFET (Metal Oxide)	300 W	-55 °C	150 °C	TO-247-3	TO-247AD (IXFH)
Littelfuse/Commercial Vehicle Products IXFH16N120P	16 A		30 V	950 mOhm	6900 pF	6.5 V	1200 V	N-Channel	Through Hole	10 V	MOSFET (Metal Oxide)	660 W	-55 °C	150 °C	TO-247-3	TO-247AD (IXFH)	120 nC
Littelfuse/Commercial Vehicle Products IXFH16N60P3	16 A	36 nC	30 V	470 mOhm		5 V	600 V	N-Channel	Through Hole	10 V	MOSFET (Metal Oxide)		-55 °C	150 °C	TO-247-3	TO-247 (IXTH)		347 W	1830 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.77
		10	$ 8.37
		100	$ 6.98
		500	$ 6.16
		1000	$ 5.54

Description

General part information

IXFH16N120P Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

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