IXFH16N120P Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Littelfuse/Commercial Vehicle Products IXFH16N50P	16 A	43 nC	30 V	400 mOhm	2250 pF	5.5 V	500 V	N-Channel	Through Hole	10 V	MOSFET (Metal Oxide)	300 W	-55 °C	150 °C	TO-247-3	TO-247AD (IXFH)
Littelfuse/Commercial Vehicle Products IXFH16N120P	16 A		30 V	950 mOhm	6900 pF	6.5 V	1200 V	N-Channel	Through Hole	10 V	MOSFET (Metal Oxide)	660 W	-55 °C	150 °C	TO-247-3	TO-247AD (IXFH)	120 nC
Littelfuse/Commercial Vehicle Products IXFH16N60P3	16 A	36 nC	30 V	470 mOhm		5 V	600 V	N-Channel	Through Hole	10 V	MOSFET (Metal Oxide)		-55 °C	150 °C	TO-247-3	TO-247 (IXTH)		347 W	1830 pF

Catalog

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Key Features

• International Standard Packages

• Dynamic dv/dt Rating

• Avalanche Rated

• Fast Intrinsic Rectifier

• Low QGand RDS(on)

• Low Drain-to-Tab Capacitance

• Low Package Inductance

Description

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings