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Integrated Circuits (ICs)

LM74810MDRRR

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Texas Instruments

3-V TO 65-V BACK-TO-BACK NFET IDEAL DIODE CONTROLLER WITH HIGH GATE DRIVE, -55°C TO 125°C

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WSON (DRR)
Integrated Circuits (ICs)

LM74810MDRRR

Active
Texas Instruments

3-V TO 65-V BACK-TO-BACK NFET IDEAL DIODE CONTROLLER WITH HIGH GATE DRIVE, -55°C TO 125°C

Technical Specifications

Parameters and characteristics for this part

SpecificationLM74810MDRRR
ApplicationsGeneral Purpose
Current - Output (Max) [Max]2.6 A
Current - Supply413 µA
FET TypeN-Channel
Internal Switch(s)False
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case12-WFDFN Exposed Pad
Ratio - Input:Output [custom]1:1
Supplier Device Package12-WSON (3x3)
TypeN+1 ORing Controller
Voltage - Supply [Max]65 V
Voltage - Supply [Min]3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.02
10$ 5.41
25$ 5.11
100$ 4.43
250$ 4.20
500$ 3.77
1000$ 3.18
Digi-Reel® 1$ 6.02
10$ 5.41
25$ 5.11
100$ 4.43
250$ 4.20
500$ 3.77
1000$ 3.18
Tape & Reel (TR) 3000$ 2.13
Texas InstrumentsLARGE T&R 1$ 3.55
100$ 2.93
250$ 2.10
1000$ 1.58

Description

General part information

LM7481 Series

The LM74810 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65-V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM74810 employs reverse current blocking using linear regulation and comparator scheme. With common drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using another ideal diode. The LM74810 has a maximum voltage rating of 65V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.

The LM74810 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65-V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM74810 employs reverse current blocking using linear regulation and comparator scheme. With common drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using another ideal diode. The LM74810 has a maximum voltage rating of 65V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.