LM7481 Series

3-V to 65-V back-to-back NFET ideal diode controller with high gate drive, -55°C to 125°C

Catalog

3-V to 65-V back-to-back NFET ideal diode controller with high gate drive, -55°C to 125°C

Part	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Ratio - Input:Output [custom]	Current - Supply	Internal Switch(s)	FET Type	Mounting Type	Current - Output (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Applications	Type	Package / Case
Texas Instruments LM74810MDRRR	65 V	3 V	12-WSON (3x3)	1:1	413 µA		N-Channel	Surface Mount Wettable Flank	2.6 A	-40 °C	125 °C	General Purpose	N+1 ORing Controller	12-WFDFN Exposed Pad

Catalog

3-V to 65-V back-to-back NFET ideal diode controller with high gate drive, -55°C to 125°C

Key Features

• Qualified for extended temperature applicationsDevice temperature: –55°C to +125°C ambient operating temperature range3-V to 65-V input rangeReverse input protection down to –65 VDrives external back to back N-channel MOSFETsIdeal diode operation with 9.1-mV A to C forward voltage drop regulationLow reverse detection threshold (–4 mV) with fast response (0.5 µs)Active rectification up to 200-KHz60-mA peak gate (DGATE) turn-on current2.6-A peak DGATE turnoff currentIntegrated 3.8-mA charge pumpAdjustable overvoltage protectionLow 2.87-µA shutdown current (EN/UVLO=Low)2.6-A peak DGATE turn-off currentMeets automotive ISO7637 transient requirements with a suitable TVS diodeAvailable in space saving 12-pin WSON packageQualified for extended temperature applicationsDevice temperature: –55°C to +125°C ambient operating temperature range3-V to 65-V input rangeReverse input protection down to –65 VDrives external back to back N-channel MOSFETsIdeal diode operation with 9.1-mV A to C forward voltage drop regulationLow reverse detection threshold (–4 mV) with fast response (0.5 µs)Active rectification up to 200-KHz60-mA peak gate (DGATE) turn-on current2.6-A peak DGATE turnoff currentIntegrated 3.8-mA charge pumpAdjustable overvoltage protectionLow 2.87-µA shutdown current (EN/UVLO=Low)2.6-A peak DGATE turn-off currentMeets automotive ISO7637 transient requirements with a suitable TVS diodeAvailable in space saving 12-pin WSON package

Description

The LM74810 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65-V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM74810 employs reverse current blocking using linear regulation and comparator scheme. With common drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using another ideal diode. The LM74810 has a maximum voltage rating of 65V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology. The LM74810 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65-V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM74810 employs reverse current blocking using linear regulation and comparator scheme. With common drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using another ideal diode. The LM74810 has a maximum voltage rating of 65V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.