Specification	FGH4L75T65MQDC50

Current - Collector (Ic) (Max) [Max]	110 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	146 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power - Max [Max]	385 W
Supplier Device Package	TO-247-4L
Switching Energy	960 µJ, 720 µJ
Td (on/off) @ 25°C	29 ns, 187 ns
Test Condition	75 A, 15 V, 10 Ohm, 400 V
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max)	650 V

FGH4L75T65MQDC50 Series

650V Field stop 4th generation mid speed IGBT with co-pack SiC diode

Part	Mounting Type	Switching Energy	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Power - Max [Max]	Td (on/off) @ 25°C	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	IGBT Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FGH4L75T65MQDC50	Through Hole	720 µJ 960 µJ	1.8 V	TO-247-4L	385 W	29 ns 187 ns	146 nC	650 V	300 A	Field Stop	TO-247-4	110 A	10 Ohm 15 V 75 A 400 V	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 11.99
		10	$ 8.43
		25	$ 7.51
		100	$ 6.49
		250	$ 5.99
		500	$ 5.69
		1000	$ 5.44
Newark	Each	250	$ 6.10
		500	$ 5.93
ON Semiconductor	N/A	1	$ 5.81

Description

General part information

FGH4L75T65MQDC50 Series

Using the novel field stop 4thgeneration IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications