FGH4L75T65MQDC50 Series

650V Field stop 4th generation mid speed IGBT with co-pack SiC diode

Catalog

650V Field stop 4th generation mid speed IGBT with co-pack SiC diode

Part	Mounting Type	Switching Energy	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Power - Max [Max]	Td (on/off) @ 25°C	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	IGBT Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FGH4L75T65MQDC50	Through Hole	720 µJ 960 µJ	1.8 V	TO-247-4L	385 W	29 ns 187 ns	146 nC	650 V	300 A	Field Stop	TO-247-4	110 A	10 Ohm 15 V 75 A 400 V	-55 °C	175 ░C

Catalog

650V Field stop 4th generation mid speed IGBT with co-pack SiC diode

Key Features

• Positive temperature co-efficient

• Low Vce(sat)

• Low Eon and Eoff

Description

Using the novel field stop 4thgeneration IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications