Discrete Semiconductor Products

STTH302RL

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200 V, 3 A DO-201AD ULTRAFAST DIODE

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Discrete Semiconductor Products

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200 V, 3 A DO-201AD ULTRAFAST DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	STTH302RL

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

200 V, 3 A DO-201AD Ultrafast Diode

Part	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
STMicroelectronics STTH302S	200 mA 500 ns	950 mV	DO-214AB SMC	3 µA	Standard	SMC	35 ns	Surface Mount	175 ░C	3 A	200 V
STMicroelectronics STTH302	200 mA 500 ns	950 mV	DO-201AD Axial	3 µA	Standard	DO-201AD	35 ns	Through Hole	175 ░C	3 A	200 V
STMicroelectronics STTH302RL	200 mA 500 ns	950 mV	DO-201AD Axial	3 µA	Standard	DO-201AD	35 ns	Through Hole	175 ░C	3 A	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The STTH302S, which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits.

The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.