Discrete Semiconductor Products

SI4845DY-T1-E3

Obsolete

MOSFET P-CH 20V 2.7A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 2.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4845DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	312 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.75 W, 1.75 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	FET Feature	Supplier Device Package	Technology	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Vishay General Semiconductor - Diodes Division SI4845DY-T1-E3	2.7 A	8-SOIC	3.9 mm	0.154 in	1.5 V	Schottky Diode (Isolated)	8-SOIC	MOSFET (Metal Oxide)	1.75 W 2.75 W	P-Channel	210 mOhm	312 pF	20 V	-55 °C	150 °C	12 V	2.5 V 4.5 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.7A (Tc) 1.75W (Ta), 2.75W (Tc) Surface Mount 8-SOIC

Technical documentation and resources

No documents available