SI4845 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 2.7A 8SO
| Part | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | FET Feature | Supplier Device Package | Technology | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.7 A | 8-SOIC | 3.9 mm | 0.154 in | 1.5 V | Schottky Diode (Isolated) | 8-SOIC | MOSFET (Metal Oxide) | 1.75 W 2.75 W | P-Channel | 210 mOhm | 312 pF | 20 V | -55 °C | 150 °C | 12 V | 2.5 V 4.5 V | Surface Mount |