NTMFD4C820NAT1G

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ON Semiconductor

NFET SO8FL 30V 27A 3.4MOH

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NTMFD4C820NAT1G

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ON Semiconductor

NFET SO8FL 30V 27A 3.4MOH

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Technical Specifications

Parameters and characteristics for this part

Specification	NTMFD4C820NAT1G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9.1 A, 13.7 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	29 nC
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1950 pF
Input Capacitance (Ciss) (Max) @ Vds [Min]	970 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	1.09 W, 1.15 W
Rds On (Max) @ Id, Vgs	7.3 mOhm, 3.4 mOhm
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

NTMFD4C20N Series

Dual N-Channel Power MOSFET 30V

Part	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Technology	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power - Max	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds [Min]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTMFD4C86NT3G	18.1 A	11.3 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.1 W	8-DFN (5x6)	2.2 V	5.4 mOhm	8-PowerTDFN	-55 °C	150 °C	1153 pF	22.2 nC	Surface Mount
ON Semiconductor NTMFD4C87NT3G	14.9 A	11.7 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.1 W	8-DFN (5x6)	2.2 V	5.4 mOhm	8-PowerTDFN	-55 °C	150 °C	1252 pF	22.2 nC	Surface Mount
ON Semiconductor NTMFD4C20NT1G	13.7 A	9.1 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)		8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)		7.3 mOhm	8-PowerTDFN	-55 °C	150 °C	970 pF		Surface Mount	9.3 nC	2.1 V	1.09 W 1.15 W
ON Semiconductor NTMFD4C88NT1G			MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.1 W	8-DFN (5x6)	2.2 V	5.4 mOhm	8-PowerTDFN	-55 °C	150 °C	1252 pF	22.2 nC	Surface Mount				11.7 A 14.2 A
ON Semiconductor NTMFD4C85NT1G			MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.13 W	8-DFN (5x6)			8-PowerTDFN	-55 °C	150 °C	1960 pF	32 nC	Surface Mount		2.1 V		15.4 A 29.7 A	3 mOhm
ON Semiconductor NTMFD4C820NAT1G			MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)		8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)		3.4 mOhm 7.3 mOhm	8-PowerTDFN	-55 °C	150 °C			Surface Mount	19 nC	2.1 V	1.09 W 1.15 W	9.1 A 13.7 A		1950 pF	970 pF	29 nC
ON Semiconductor NTMFD4C20NT3G	13.7 A	9.1 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)		8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)		7.3 mOhm	8-PowerTDFN	-55 °C	150 °C	970 pF		Surface Mount	9.3 nC	2.1 V	1.09 W 1.15 W
ON Semiconductor NTMFD4C50NT1G							8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)			8-PowerTDFN					Surface Mount				12 A
ON Semiconductor NTMFD4C87NT1G	14.9 A	11.7 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.1 W	8-DFN (5x6)	2.2 V	5.4 mOhm	8-PowerTDFN	-55 °C	150 °C	1252 pF	22.2 nC	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1500	$ 0.45

Description

General part information

NTMFD4C20N Series

Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, DualN−Channel SO8FL

Documents

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