NTMFD4C20N Series

Dual N-Channel Power MOSFET 30V

Catalog

Dual N-Channel Power MOSFET 30V

Part	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Technology	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power - Max	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds [Min]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTMFD4C86NT3G	18.1 A	11.3 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.1 W	8-DFN (5x6)	2.2 V	5.4 mOhm	8-PowerTDFN	-55 °C	150 °C	1153 pF	22.2 nC	Surface Mount
ON Semiconductor NTMFD4C87NT3G	14.9 A	11.7 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.1 W	8-DFN (5x6)	2.2 V	5.4 mOhm	8-PowerTDFN	-55 °C	150 °C	1252 pF	22.2 nC	Surface Mount
ON Semiconductor NTMFD4C20NT1G	13.7 A	9.1 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)		8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)		7.3 mOhm	8-PowerTDFN	-55 °C	150 °C	970 pF		Surface Mount	9.3 nC	2.1 V	1.09 W 1.15 W
ON Semiconductor NTMFD4C88NT1G			MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.1 W	8-DFN (5x6)	2.2 V	5.4 mOhm	8-PowerTDFN	-55 °C	150 °C	1252 pF	22.2 nC	Surface Mount				11.7 A 14.2 A
ON Semiconductor NTMFD4C85NT1G			MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.13 W	8-DFN (5x6)			8-PowerTDFN	-55 °C	150 °C	1960 pF	32 nC	Surface Mount		2.1 V		15.4 A 29.7 A	3 mOhm
ON Semiconductor NTMFD4C820NAT1G			MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)		8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)		3.4 mOhm 7.3 mOhm	8-PowerTDFN	-55 °C	150 °C			Surface Mount	19 nC	2.1 V	1.09 W 1.15 W	9.1 A 13.7 A		1950 pF	970 pF	29 nC
ON Semiconductor NTMFD4C20NT3G	13.7 A	9.1 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)		8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)		7.3 mOhm	8-PowerTDFN	-55 °C	150 °C	970 pF		Surface Mount	9.3 nC	2.1 V	1.09 W 1.15 W
ON Semiconductor NTMFD4C50NT1G							8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)			8-PowerTDFN					Surface Mount				12 A
ON Semiconductor NTMFD4C87NT1G	14.9 A	11.7 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual) Asymmetrical	1.1 W	8-DFN (5x6)	2.2 V	5.4 mOhm	8-PowerTDFN	-55 °C	150 °C	1252 pF	22.2 nC	Surface Mount

Catalog

Dual N-Channel Power MOSFET 30V

Key Features

• Co−Packaged Power Stage Solution to Minimize Board Space

• Minimized Parasitic Inductances

• Optimized Devices to Reduce Power Losses

• RoHS Compliant

Description

Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, DualN−Channel SO8FL