Discrete Semiconductor Products

BUK9K35-60RAX

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MOSFET 2N-CH 60V 22A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 22A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9K35-60RAX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1081 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	38 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Gate Charge (Qg) (Max) @ Vgs	Configuration	FET Feature	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Grade	Technology	Package / Case
Freescale Semiconductor - NXP BUK9K35-60E,115	14.2 nC	2 N-Channel (Dual)	Logic Level Gate	2.1 V	LFPAK56D	-55 °C	175 ░C	32 mOhm	60 V	22 A	Surface Mount	AEC-Q101	1081 pF	38 W	Automotive	MOSFET (Metal Oxide)	8-LFPAK56 SOT-1205
Freescale Semiconductor - NXP BUK9K35-60RAX	7.8 nC	2 N-Channel (Dual)	Logic Level Gate	2.1 V	LFPAK56D	-55 °C	175 ░C	32 mOhm	60 V	22 A	Surface Mount	AEC-Q101	1081 pF	38 W	Automotive	MOSFET (Metal Oxide)	8-LFPAK56 SOT-1205

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General part information

Mosfet Array 60V 22A (Ta) 38W (Ta) Surface Mount LFPAK56D

Technical documentation and resources