Discrete Semiconductor Products

BUK9K35-60E,115

Active

MOSFET 2N-CH 60V 22A LFPAK56D

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 60V 22A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9K35-60E,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	14.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1081 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	38 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Gate Charge (Qg) (Max) @ Vgs	Configuration	FET Feature	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Grade	Technology	Package / Case
Freescale Semiconductor - NXP BUK9K35-60E,115	14.2 nC	2 N-Channel (Dual)	Logic Level Gate	2.1 V	LFPAK56D	-55 °C	175 ░C	32 mOhm	60 V	22 A	Surface Mount	AEC-Q101	1081 pF	38 W	Automotive	MOSFET (Metal Oxide)	8-LFPAK56 SOT-1205
Freescale Semiconductor - NXP BUK9K35-60RAX	7.8 nC	2 N-Channel (Dual)	Logic Level Gate	2.1 V	LFPAK56D	-55 °C	175 ░C	32 mOhm	60 V	22 A	Surface Mount	AEC-Q101	1081 pF	38 W	Automotive	MOSFET (Metal Oxide)	8-LFPAK56 SOT-1205

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 22A 38W Surface Mount LFPAK56D

Technical documentation and resources