Specification	NTB004N10G

Current - Continuous Drain (Id) @ 25°C	201 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	175 nC
Input Capacitance (Ciss) (Max) @ Vds	11900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	340 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTB004N10G Series

Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK

Part	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTB004N10G	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	340 W	100 V	-55 °C	175 ░C	4 V	20 V	Surface Mount	4.2 mOhm	10 V	N-Channel	201 A	MOSFET (Metal Oxide)	11900 pF	175 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK

Technical documentation and resources