NTB004N10G Series

Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK

Catalog

Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK

Part	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTB004N10G	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	340 W	100 V	-55 °C	175 ░C	4 V	20 V	Surface Mount	4.2 mOhm	10 V	N-Channel	201 A	MOSFET (Metal Oxide)	11900 pF	175 nC

Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK

• Avalanche Energy Specified

• Specifically designed for Wide SOA applications from a 48V Bus

• Pb-Free Packages are Available

• Low RDS-on 4.2m Ohm max

Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK