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TO-220-3
Discrete Semiconductor Products

NDP6060L

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ON Semiconductor

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 48A, 25MΩ

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TO-220-3
Discrete Semiconductor Products

NDP6060L

Active
ON Semiconductor

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 48A, 25MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNDP6060L
Current - Continuous Drain (Id) @ 25°C48 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]100 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.96
10$ 2.60
100$ 1.83
500$ 1.50
1000$ 1.40
2000$ 1.38
NewarkEach 1$ 4.72
10$ 4.21
25$ 3.47
50$ 2.72
100$ 2.64
250$ 2.61
500$ 2.47
ON SemiconductorN/A 1$ 1.47

Description

General part information

NDP6060L Series

These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Documents

Technical documentation and resources