NDP6060L Series

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ

Catalog

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
ON Semiconductor NDP6060L	10 V	5 V	60 nC	100 W	2 V	48 A	Through Hole	TO-220-3	60 V	16 V	20 mOhm	MOSFET (Metal Oxide)	N-Channel	175 ░C	-65 °C	TO-220-3

Catalog

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ

Key Features

• 48A, 60V. RDS(ON)= 0.025Ω @ VGS= 5V.

• Low drive requirements allowing operation directly from logic drivers. VGS(TH)< 2.0V.

• Critical DC electrical parameters specified at elevated temperature.

• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• 175°C maximum junction temperature rating.

• High density cell design for extremely low RDS(ON).

• TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

Description

These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.