Specification	ECH8690-TL-H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.7 A, 3.5 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	4V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

ECH8690 Series

Complementary Dual Power MOSFET 60V

Part	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Configuration	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type
ON Semiconductor ECH8690-TL-H	55 mOhm	1.5 W	N and P-Channel	150 °C	3.5 A 4.7 A	8-ECH	60 V	4V Drive Logic Level Gate	18 nC	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ECH8690 is Power MOSFET, 60V, 4.7A, 55mΩ, -60V, -3.5A, 94mΩ, Complememtary Dual ECH8 for general purpose switching applications.

Technical documentation and resources