ECH8690 Series

Complementary Dual Power MOSFET 60V

Catalog

Complementary Dual Power MOSFET 60V

Part	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Configuration	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type
ON Semiconductor ECH8690-TL-H	55 mOhm	1.5 W	N and P-Channel	150 °C	3.5 A 4.7 A	8-ECH	60 V	4V Drive Logic Level Gate	18 nC	MOSFET (Metal Oxide)	Surface Mount

Complementary Dual Power MOSFET 60V

• On-State ResistanceN-Channel: RDS(on)1=42 mΩ (typ.)P-channel: RDS(on)1=73 mΩ (typ.)

• Protection diode in

• 4V drive

• Nch+Pch MOSFET

ECH8690 is Power MOSFET, 60V, 4.7A, 55mΩ, -60V, -3.5A, 94mΩ, Complememtary Dual ECH8 for general purpose switching applications.