Specification	MMBTH10-4LT1

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120 hFE
Frequency - Transition	800 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	225 mW
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V

MMBTH10L Series

NPN Bipolar Transistor

Part	Transistor Type	Power - Max [Max]	Frequency - Transition	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MMBTH10LT3G	NPN	225 mW	650 MHz	SOT-23-3 (TO-236)	Surface Mount	25 V	SC-59 SOT-23-3 TO-236-3	60	-55 °C	150 °C
ON Semiconductor MMBTH10LT1
ON Semiconductor SMMBTH10-4LT3G	NPN	225 mW	800 MHz	SOT-23-3 (TO-236)	Surface Mount	25 V	SC-59 SOT-23-3 TO-236-3	120 hFE	-55 °C	150 °C
ON Semiconductor MMBTH10-4LT1	NPN	225 mW	800 MHz	SOT-23-3 (TO-236)	Surface Mount	25 V	SC-59 SOT-23-3 TO-236-3	120 hFE	-55 °C	150 °C
ON Semiconductor MMBTH10RG	NPN	225 mW	450 MHz	SOT-23-3	Surface Mount	40 V	SC-59 SOT-23-3 TO-236-3		-55 °C	150 °C	50 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MMBTH10L Series

This NPN Bipolar Transistor is designed for general purpose VHF/UHF applications and is housed in the SOT-23 surface mount package. This device is ideal for low-power surface mount applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

Package Drawing