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SOT 23-3
Discrete Semiconductor Products

MMBTH10LT3G

Active
ON Semiconductor

BIPOLAR - RF TRANSISTOR, NPN, 25 V, 650 MHZ, 225 MW, 1 MA, SOT-23

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SOT 23-3
Discrete Semiconductor Products

MMBTH10LT3G

Active
ON Semiconductor

BIPOLAR - RF TRANSISTOR, NPN, 25 V, 650 MHZ, 225 MW, 1 MA, SOT-23

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBTH10LT3G
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]60
Frequency - Transition650 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.27
10$ 0.22
25$ 0.18
100$ 0.12
250$ 0.09
500$ 0.08
1000$ 0.05
2500$ 0.05
5000$ 0.04
Digi-Reel® 1$ 0.27
10$ 0.22
25$ 0.18
100$ 0.12
250$ 0.09
500$ 0.08
1000$ 0.05
2500$ 0.05
5000$ 0.04
Tape & Reel (TR) 10000$ 0.03
30000$ 0.03
50000$ 0.03
100000$ 0.03
250000$ 0.03
LCSCPiece 1$ 0.04
200$ 0.01
500$ 0.01
1000$ 0.01
NewarkEach (Supplied on Full Reel) 6000$ 0.04
6000$ 0.04
18000$ 0.04
18000$ 0.04
30000$ 0.03
30000$ 0.03
ON SemiconductorN/A 1$ 0.03

Description

General part information

MMBTH10L Series

This NPN Bipolar Transistor is designed for general purpose VHF/UHF applications and is housed in the SOT-23 surface mount package. This device is ideal for low-power surface mount applications.