Discrete Semiconductor Products

STW33N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN TO-247 PACKAGE

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Discrete Semiconductor Products

STW33N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsAN4337 +25

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW33N60M2

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1781 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STW33N60M2 Series

N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW33N60M2	125 mOhm	4 V	45.5 nC	-55 °C	150 °C	26 A	25 V	600 V	190 W	Through Hole	TO-247-3	10 V	TO-247-3	N-Channel	MOSFET (Metal Oxide)	1781 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.97
		30	$ 3.94
		120	$ 3.38
		510	$ 3.00
		1020	$ 2.57
		2010	$ 2.42
Newark	Each	1	$ 7.28
		10	$ 5.99
		25	$ 4.70
		50	$ 4.42
		100	$ 4.13
		250	$ 3.72

Description

General part information

STW33N60M2 Series

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.