Specification	KSP2222ABU

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

KSP2222A Series

NPN Epitaxial Silicon Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Mounting Type	Operating Temperature	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]
ON Semiconductor KSP2222ABU	1 V	40 V	TO-92-3	Through Hole	150 °C	0.01 µA	100	300 MHz	625 mW	NPN	TO-226-3 TO-92-3	600 mA
ON Semiconductor KSP2222ABU	1 V	40 V	TO-92-3	Through Hole	150 °C	0.01 µA	100	300 MHz	625 mW	NPN	TO-226-3 TO-92-3	600 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources