Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Collector-Emitter Voltage : VCEO= 40V
• Collector Power Dissipation: PC(max) = 625mW
• Available as PN2222A
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NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Mounting Type | Operating Temperature | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Frequency - Transition | Power - Max [Max] | Transistor Type | Package / Case | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 1 V | 40 V | TO-92-3 | Through Hole | 150 °C | 0.01 µA | 100 | 300 MHz | 625 mW | NPN | TO-226-3 TO-92-3 | 600 mA |
ON Semiconductor | 1 V | 40 V | TO-92-3 | Through Hole | 150 °C | 0.01 µA | 100 | 300 MHz | 625 mW | NPN | TO-226-3 TO-92-3 | 600 mA |