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ONSEMI LM317LBDR2G
Integrated Circuits (ICs)

LE25U20AMB-AH

Active
ON Semiconductor

FLASH MEMORY, SERIAL NOR, 2 MBIT, 256K X 8BIT, SPI, SOIC, 8 PINS

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ONSEMI LM317LBDR2G
Integrated Circuits (ICs)

LE25U20AMB-AH

Active
ON Semiconductor

FLASH MEMORY, SERIAL NOR, 2 MBIT, 256K X 8BIT, SPI, SOIC, 8 PINS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationLE25U20AMB-AH
Clock Frequency30 MHz
Memory FormatFLASH
Memory InterfaceSPI
Memory Organization [custom]256 K
Memory Organization [custom]8
Memory Size2 Gbit
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Supplier Device Package8-SOP
TechnologyFLASH
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.3 V
Write Cycle Time - Word, Page5 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.99
10$ 0.88
25$ 0.84
50$ 0.81
100$ 0.78
250$ 0.74
500$ 0.72
1000$ 0.69
Digi-Reel® 1$ 0.99
10$ 0.88
25$ 0.84
50$ 0.81
100$ 0.78
250$ 0.74
500$ 0.72
1000$ 0.69
Tape & Reel (TR) 2000$ 0.67
4000$ 0.64
6000$ 0.63
10000$ 0.61
14000$ 0.60
NewarkEach (Supplied on Cut Tape) 1$ 1.19
10$ 1.09
ON SemiconductorN/A 1$ 0.56

Description

General part information

LE25U20AMB Series

The LE25U20AMB is a serial interface-compatible flash memory device with a 256K x 8-bit configuration. It uses a single 2.5 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25U20AMB is housed in an 8-pin ultra-miniature package. These features make this device ideally suited to storing program codes in applications such as portable information devices, which are required to have increasingly more compact dimensions. Moreover, by using the small sector erase function this product is also suitable for the parameter or the date storage usage with comparatively little rewriting times that becomes a capacity shortage in EEPROM.